CSD86330Q3D
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likeCSD86330Q3D
Brand：TI
Model：CSD86330Q3D
stock：26657
Store：ShenZhen/Hongkong
DataSheet：
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Price：1+
￥2.97
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| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | NexFET™ |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-PowerLDFN |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 6W |
| FET Type | 2 N channels(half-bridge) |
| Drain source voltage (Vdss) | 25V |
| Current at 25 ° C - continuous drain (Id) | 20A |
| On resistance (maximum) for different Ids and Vgs | 9.6 mΩ @ 14A,8V |
| Vgs (th) (maximum) for different Ids | 2.1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 6.2nC @ 4.5V |
| Input capacitance at different Vds (Ciss) (maximum) | 920pF @ 12.5V |
| FET function | Logic level gate |
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Industry trends
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